Profile picture of Prosper Ngabonziza


Max Planck Institute for Solid State Research
Solid State Quantum Electronics

Research Interests

Quantum electronics
Nanoelectronics and nanotechnology
Material science and epitaxial thin film growth


Topics to speak on:

role of research infrastructures for meeting both the demand of the scientific community to conduct high-level scientific research and the demand of knowledge transfer for creating innovation and building competitive industries in developing countries, particularly in Africa.


Prosper Ngabonziza did undergraduate studies in Physics at University of Rwanda (former National University of Rwanda). He completed with cum laude, in 2010, a postgraduate diploma in mathematical sciences at African Institute for Mathematical Sciences (AIMS), under the University of Cape Town in South Africa; and in 2012 a Master’s degree with cum laude in experimental physics from University of Johannesburg. He received in 2013 the S2A3 Bronze Medal awarded by the Southern Africa association for advancement of science to the best student who did a most meritorious master dissertation in a science department in South Africa. In 2016, he completed a PhD in engineering physics from University of Twente in The Netherlands, under the supervision of Prof. Alexander Brinkman and Prof. Hans Hilgenkamp. His PhD project was on topological insulators (TIs). He was combining thin film growth, characterizations and quantum transport study of TIs; in particular nanoscale electronics in superconductor-topological insulator Josephson junction devices (Nb-Bi2Te3-Nb).
Currently, he works at the Max Planck Institute for Solid State Research in Stuttgart, in the department of solid-state quantum electronics of Prof. Jochen Mannhart. His research at Max Planck focuses on quantum matter heterostructures fabricated from complex oxides with the goal to explore novel phenomena in devices fabricated from such heterostructures. For example; we demonstrated recently the first application of two-dimensional doping to ion conductors, specifically to perovskite proton conductor BaZrO3–based heterostructures. Thereafter, we integrated these heterostructures into tunnel junction devices; and for the very first time, using inelastic electron tunneling spectroscopy (IETS), we have demonstrated electron tunneling at high-temperatures in planar tunnel junction devices. More details on these projects are here.
Also, he is actively involved in the The African Light Source (AfLS) project, as a member of the executive steering committee of the African light source foundation. AfLS project is working towards building a synchrotron light source on the African continent that will contribute significantly to the African science renaissance. For details on this project, see AfLS foundation website and the upcoming event website.
In June 2019, he has been nominated as a Fellow to the Rwanda Academy of Science.
Furthermore he has been selected for a membership in the Global Young Academy for a period of 5 years beginning in June 2020, based on his distinguished qualifications and commitment to service to society.
Currently, he is serving on the 2021/2022 Global Young Academy Executive Committee.


The S2A3 Bronze Medal awarded by the Southern Africa association for advancement of science

Best MSc Oral Presenter at the 57th Annual Conference of the South African Institute of Physics.

Lord Martin Rees Scholarship Award at African Institute for Mathematical Sciences (AIMS)

Selected to attend the Prestigious 65th Lindau Nobel Laureates Meeting as Young Researcher